Next-Generation 808nm High-Power Single-Emitter Laser Chips Achieve Dual Breakthroughs in Efficiency and Lifetime
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Jun 03, 2026 . 0 Comments

Next-Generation 808nm High-Power Single-Emitter Laser Chips Achieve Dual Breakthroughs in Efficiency and Lifetime

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industryinchina

DegreeX CoreChip has developed a new generation of 808nm semiconductor laser single-emitter chips, boosting electro-optical conversion efficiency from 60% to 64% and achieving an extrapolated continuous service life exceeding 75,000 hours.

Background

Through multiple key technological breakthroughs in epitaxial design, material growth, and process fabrication, DegreeX CoreChip (DuGen Hexin) has successfully developed a new generation of 808nm series semiconductor laser single-emitter chips with significantly improved efficiency and reliability. These chips provide more efficient and stable core light sources for solid-state laser pumping, laser illumination, biomedical applications, and scientific research.

808nm semiconductor laser chips serve as the core light source for solid-state laser pumping, laser illumination, biomedical applications, and scientific research. Their electro-optical conversion efficiency and long-term reliability directly determine the energy consumption level, operational stability, and service life of laser systems. Therefore, achieving a dual breakthrough in both efficiency and reliability not only significantly enhances system energy efficiency ratios and extends service life, but also meets the critical demands for high performance and sustained stability in demanding applications, driving technological upgrades and rapid development across related fields.

Development Achievements

Relying on a fully independent intellectual property rights technology system, DegreeX CoreChip conducted systematic technical research targeting the efficiency and reliability bottlenecks of 808nm high-power semiconductor laser chips. Through innovative quantum well stress regulation methods, optimized epitaxial structure design and epitaxial material growth quality, and refined key processes including low-damage wafer processing and cavity surface passivation treatment, the company achieved coordinated improvements in electro-optical conversion efficiency and device reliability.

The electro-optical conversion efficiency has been successfully elevated from the industry standard of 60% to 64%, establishing a new performance benchmark, while the extrapolated continuous service life has achieved a major breakthrough exceeding 75,000 hours. This has resulted in a series of 808nm single-emitter products rated at 6W, 10W, 15W, and 22W, which can be flexibly adapted to diverse application scenarios including industrial pumping, laser medicine, and infrared illumination — providing critical support for high-end laser applications that demand high reliability and high efficiency.

808nm 10W typical L-I-V-E curve

808nm 10W typical L-I-V-E curve

808nm 22W typical L-I-V-E curve

808nm 22W typical L-I-V-E curve

808nm single emitter 7000H high-temperature high-current accelerated reliability test curve

808nm single emitter 7000H high-temperature high-current accelerated reliability test curve

New Generation High-Efficiency and High-Reliability Product Family

New generation high-efficiency and reliability product family

The newly formed product family encompasses the 808nm 6W, 10W, 15W, and 22W single-emitter series, delivering a comprehensive solution that combines superior electro-optical conversion efficiency with extended operational lifetime for next-generation laser systems.

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